| PART |
Description |
Maker |
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| IN74HCT20N IN74HCT20 IN74HCT20D |
DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS
|
INTEGRAL Semiconductor Devices
INTEGRAL[Integral Corp.]
|
| IN74HCT00AN IN74HCT00A IN74HCT00AD |
Quad 2-Input NAND Gate High-Performance Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
| IN74HC86N IN74HC86 IN74HC86D |
Quad 2-Input Exclusive OR Gate High-Performance Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
| KK74ACT20 KK74ACT20D KK74ACT20N |
Dual 4-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK74HC20A KK74HC20AD KK74HC20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4011BD KK4011BN |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4023B |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| KK4011B |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| KK74HC10AD KK74HC10AN |
Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
