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2SB806KQ - Dual/Triple-Voltage µP Supervisory Circuits

2SB806KQ_3297486.PDF Datasheet

 
Part No. 2SB806KQ
Description Dual/Triple-Voltage µP Supervisory Circuits

File Size 222.96K  /  4 Page  

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Part: 2SB806
Maker: NEC
Pack: SOT89
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 Full text search : Dual/Triple-Voltage µP Supervisory Circuits
 Product Description search : Dual/Triple-Voltage µP Supervisory Circuits


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Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
MAXIM - Dallas Semiconductor
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