| PART |
Description |
Maker |
| TMPFBC264A TMPFBC264B TMPFBC264C TMPFBC264D TMPFBF |
TRANSISTOR | JFET | N-CHANNEL | 4.5MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 8MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 140MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 13MA I(DSS) | TO-236
|
|
| 2SJ109BL 2SJ109V 2SJ109GR |
TRANSISTOR | JFET | P-CHANNEL | DUAL | 6MA I(DSS) | ZIP
TRANSISTOR | JFET | P-CHANNEL | DUAL | 10MA I(DSS) | ZIP
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | JFET | P-CHANNEL | DUAL | 6MA I(DSS) | ZIP 晶体管|场效应| P通道|双| 6MA我（直）|邮编
TRANSISTOR | JFET | P-CHANNEL | DUAL | 10MA I(DSS) | ZIP 晶体管|场效应| P通道|双| 10mA的我（直）|邮编
|
Electronic Theatre Controls, Inc.
Toshiba, Corp.
|
| SST4117 SST4118 SST4119 2N4117A 2N4118A 2N4118 2N4 |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-6.4A; On-Resistance, Rds(on):35mohm; Rds
(SST4117 - SST4119) N-Channel JFET General Purpose Amplifier
N-Channel JFET General Purpose Amplifier N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72
|
CALOGIC[Calogic, LLC]
Calogic LLC
Calogic LLC
|
| TMPF4393 TMPF4093 TMPF3968A |
TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 8MA I(DSS) | TO-236
TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-236
|
|
| IFN5912 IFN5911 |
TRANSISTOR | JFET | N-CHANNEL | 7MA I(DSS) | TO-78 晶体管|场效应| N沟道|mA我（直）|8
N-Channel Dual Silicon Junction Field-Effect Transistor
|
InterFET, Corp.
InterFET Corporation
|
| 2N4859 2N4859A 2N4861 2N4861A 2N4857 2N4860 2N4856 |
JFET SWITCHING N-CHANNEL-DEPLETION 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
|
Motorola Inc
MOTOROLA INC
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| IF1320 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
N-Channel Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| 2N5457 |
N-Channel Depletion JFET(通用N沟道耗尽型结型场效应 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
|
ON Semiconductor
|
| MMBFJ175L MMBFJ175LT1 MMBFJ175LT1-D |
Small Signal JFET P-Channel
JFET Chopper P-Channel - Depletion
|
ON Semiconductor
|
| 2N3824LP BUP66 |
TRANSISTOR | JFET | N-CHANNEL | 50V V(BR)DSS | TO-46
TRANSISTOR | MOSFET | N-CHANNEL | 520V V(BR)DSS | 6A I(D) | TO-204AA
|
|
| 2SK168 2SK168E 2SK168D 2SK168F |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我（直）|2
|
Hitachi Semiconductor
Hitachi,Ltd.
|
