| PART |
Description |
Maker |
| PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| SST12LP15A-QVCE-K SST12LP15A SST12LP15A-QVCE |
2.4 GHz High-Power and High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12LP14A |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST
|
| CGD1044H CGD1044H-2015 |
1 GHz, 25 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| PTH32003 |
25 Watts/ 1.9-2.0 GHz 50-Ohm High-Gain Power Hybrid
25 Watts, 1.9-2.0 GHz 50-Ohm High-Gain Power Hybrid
25 Watts, 1.9.0 GHz 50-Ohm High-Gain Power Hybrid
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏，高隔离硅射频放大器（直流.5 GHz3伏，高隔离硅射频集成电路放大器）
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
| CGD1042H09 |
1 GHz, 23 dB gain high output power doubler
1 GHz, 23 dB gain high output power doubler
|
NXP Semiconductors
|
