PART |
Description |
Maker |
V53C311816502K-60 V53C311816502K-60I V53C311816502 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
V53C511816502K-60I V53C511816502ST-60 V53C51181650 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Ecliptek, Corp.
|
HY5116164BSLTC-60 HY5116164BJC-60 HY5116164BSLJC-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Omron Electronics, LLC Infineon Technologies AG
|
UPD421175G5-35-7JF UPD421175G5-25-7JF UPD421175LE- |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
GM71V18160CJ-7 GM71V18160CT-6 |
x16 Fast Page Mode DRAM
|
|
NN514170LJ-45 NN514170LJ-50 NN514170LJ-70 NN514170 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Microchip Technology, Inc.
|
UPD424170LLE-A60 UPD424170LG5M-A60 UPD424170AG5-70 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
TE Connectivity, Ltd.
|
HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR-II SRAM 2-Word Burst Architecture x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400(x16)的快闪记忆体和4M(x16)的静态RAM
|
Spansion, Inc.
|
IC41C1665 IS41LV1665 IS41LV1665-40K IC41LV1665 IC4 |
RES 100 OHM 5% 1/3W R1210 64K x16 bit Dynamic RAM with Fast Page Mode 64K的x16位动态随机存储器和快速页面模
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc] TE Connectivity, Ltd.
|
M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位(16777216 - Word位)动态随机存储器 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|