| PART |
Description |
Maker |
| WMS512K8L-15CLC WMS512K8L-15CLM WMS512K8-17CQ WMS5 |
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
|
WEDC[White Electronic Designs Corporation]
|
| WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM
512K X 8 STANDARD SRAM, 17 ns, CDSO32
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间17ns
512Kx8 Monolithic SRAM(512Kx8单片静态RAM（BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
| EDI88512LPXCB EDI88512LPXCC EDI88512LPXCI EDI88512 |
512Kx8 Monolithic SRAM, CMOS
|
WEDC[White Electronic Designs Corporation]
|
| WMF512K8 |
512Kx8 Monolithic Flash(512Kx8单片闪速存储器)
|
White Electronic Designs Corporation
|
| EDI88130CXCC EDI88130CXCI EDI88130CXCM EDI88130CXC |
128Kx8 MONOLITHIC SRAM, SMD 5962-89598
|
http://
|
| EDI88128LPXNI EDI88128CXNB EDI88128CXNC EDI88128CX |
128Kx8 MONOLITHIC SRAM, SMD 5962-89598
|
WEDC[White Electronic Designs Corporation]
|
| KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| WE256K8-150CCA WE256K8-150CI WE256K8-150CIA WE256K |
512KX8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091
|
WEDC[White Electronic Designs Corporation]
|
| KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
