| PART |
Description |
Maker |
| HFA25TB60S |
600V 25A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
| HFA70NC60CSM |
600V 70A HEXFRED Common Cathode Diode in a D61-8-SM package
|
International Rectifier
|
| HFA08TB60S HFA08TB60STRR |
HEXFREDTM Ultrafast, Soft Recovery Diode
600V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
|
IRF[International Rectifier]
|
| HFA15TB60S HFA15TB60STRL HFA15TB60STRR |
DIODE 15 A, SILICON, RECTIFIER DIODE, D2PAK-3, Rectifier Diode
ULTRAFAST,SOFT RECOVERY DIODE
600V 15A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
|
Vishay Semiconductors
IRF[International Rectifier]
|
| HFA08TB120STRR |
1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
|
International Rectifier
|
| HFA120EA60 HFA120FA60 |
600V 60A HEXFRED Discrete Diode in a SOT-227 package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| STE70NM60 9410 |
N-CHANNEL 600V - 0.050W - 70A ISOTOP Zener-Protected MDmesh Power MOSFET
N-CHANNEL 600V - 0.050 OHM - 70A ISOTOP ZENER-PROTECTED MDMESH POWERMOSFET
From old datasheet system
|
STMicroelectronics
|
| AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging
10-Bit D-Type Latch
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器
8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
| HFA180NH40 |
400V 180A HEXFRED Discrete Diode in a D-67 Half-Pak package
|
International Rectifier
|
| 15ETX06S 15ETX06 15ETX06-1 15ETX06FP |
15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Hyperfast Rectifier
600V 15A HyperFast Discrete Diode in a TO-220AC package
600V 15A HyperFast Discrete Diode in a TO-262 package
600V 15A HyperFast Discrete Diode in a TO-220 FullPack package
|
IRF[International Rectifier]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
