| PART |
Description |
Maker |
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 1MBI600LP060 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 600A I(C)
|
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module
IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
| IRGRDN400M12 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Diodes, Inc.
|
| IRGRDN400K06 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 520A I(C) 晶体管| IGBT功率模块|独立| 600V的五（巴西）国际消费电子展| 520A一（c
|
Diodes, Inc.
|
| PM600HHA060 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 600A I(C) 晶体管| IGBT功率模块|独立| 600V的五（巴西）国际消费电子展| 601余（丙）
|
Mitsubishi Electric, Corp.
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| IEF21KA2 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 25A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五（巴西）国际消费电子展|5A一（c
|
TE Connectivity, Ltd.
|
| CM50DY28 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五（巴西）国际消费电子展| 50A条一（c
|
Mitsubishi Electric, Corp.
|
