PART |
Description |
Maker |
W971GG8JB |
16M × 8 BANKS × 8 BIT DDR2 SDRAM
|
Winbond
|
W9751G8JB W9751G8JB-3 |
16M ?4 BANKS ?8 BIT DDR2 SDRAM DDR DRAM, PBGA84
|
Winbond WINBOND ELECTRONICS CORP
|
W971GG6JB |
8M X 8 BANKS X 16 BIT DDR2 SDRAM
|
Winbond
|
W9712G6JB |
2M × 4 BANKS × 16 BIT DDR2 SDRAM
|
Winbond
|
W9725G8JB |
8M ?4 BANKS ?8 BIT DDR2 SDRAM
|
Winbond
|
W632GG6KB-15 W632GG6KB-11 |
16M X 8 BANKS X 16 BIT DDR3 SDRAM 16M X 8 BANKS X 16 BIT DDR3 SDRAM
|
Winbond
|
HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. DDR2 SDRAM - SO DIMM 256MB DDR2 SDRAM - SO DIMM 512MB DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp Winbond Electronics, Corp.
|
K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYS72V32200GU HYS64V32200GU HYS72V64220GU HYS64V64 |
3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:15ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
|
Siemens Semiconductor G... DRAM SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYS72V32220GU-75-C2 HYS64V32220GU-75-C2 HYS72V1630 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
|
Infineon Technologies AG
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|