| PART |
Description |
Maker |
| IRFB4310GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB3006PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF8915 |
HEXFETPower MOSFET
|
http://
IRF[International Rectifier]
|
| IRF6620 IRF6618TR1 |
HEXFETPower MOSFET HEXFETPower MOSFET
|
Microchip Technology, Inc.
IRF[International Rectifier]
|
| IRFZ44ESPBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| IRLML0040TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| IRLML0030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| IRFZ44ZLPBF |
HEXFETPower MOSFET ( VDSS = 55V , RDS(on) = 13.9m, ID = 51A ) ㈢的HEXFET功率MOSFET（减振钢板基本\u003d 55V的，的RDS（on）\u003d十三点九米ヘ，身份证\u003d 51A条）
|
International Rectifier, Corp.
|
| FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 500V, 24A, 0.19ヘ
N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
