| PART |
Description |
Maker |
| UPD4564841G5 UPD4564441 UPD4564163 UPD4564163G5 UP |
64M-bit Synchronous DRAM 4-bank, LVTTL
|
ELPIDA[Elpida Memory]
|
| M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 |
From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S20DTP-6L M2V64S30DTP-6L M2V64S40DTP-6L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V64S30DTP-7 M2V64S20DTP-7 M2V64S40DTP-6 M2V64S40 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位）8K的refresh/4k刷新
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| M378B6573EZ0-CG8 |
64M X 64 SYNCHRONOUS DRAM MODULE, DMA240
|
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MT18LSDT6472AI-133XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| MT18LSDT6472DY-13EXX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 LEAD FREE, DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| EBS52UC8APFA-7A EBS52UC8APFA EBS52UC8APFA-75 |
512MB Unbuffered SDRAM DIMM 64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
