| PART |
Description |
Maker |
| HMC723LC3C |
13 Gbps, FAST RISE TIME D-TYPE FLIP-FLOP w/ PROGRAMMABLE OUTPUT VOLTAGE
|
Hittite Microwave Corporation
|
| HMC747LC3C HMC747LC3C11 |
14 Gbps, FAST RISE TIME D-TYPE FLIP-FLOP w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY
|
Hittite Microwave Corporation
|
| HMC721LP3E |
14 Gbps, FAST RISE TIME XOR / XNOR GATE w/ PROGRAMMABLE OUTPUT VOLTAGE
|
Hittite Microwave Corporation
|
| HMC745LC3C-11 |
13 Gbps, FAST RISE TIME XOR / XNOR GATE w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY
|
Hittite Microwave Corpo...
|
| L8231 L8231-21 L8231-22 L8231-23 L8231-32 L8231-44 |
2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH
Receptacle type, 1.3 レm, 1.25, 2.5 Gbps 插座类型.3レ米.25.5 Gbps
CAP 1.5PF 50V /-0.25PF C0G SMD-0402 TR-7-PA SN100 插座类型.3レ米.25.5 Gbps
Receptacle type/ 1.3 m/ 1.25/ 2.5 Gbps
Receptacle type, 1.3 m, 1.25, 2.5 Gbps
Receptacle type 1.3 m 1.25 2.5 Gbps
Receptacle type, 1.3 μm, 1.25, 2.5 Gbps
FIBER OPTIC LASER DIODE EMITTER, 1250Mbps, PANEL MOUNT, SC CONNECTOR
|
Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
|
| MAX3748HETE |
Compact 155Mbps to 4.25Gbps Limiting Amplifier 86ps Rise and Fall Time
|
Maxim Integrated Products
|
| R9800 R980009 |
For Scintillation Counting, Fast Time Response 25 mm (1 Inch) Diameter, Bialkali Photocathode, 8-stage, Head-on Type
|
Hamamatsu Corporation
|
| HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K |
NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole
Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through
DIODE ZENER 150MW 33V 0603
RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容
MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容
RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容
RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| VS-HFA70EA120 |
Fast recovery time characteristic
|
Vishay Siliconix
|
