| PART |
Description |
Maker |
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| BD442 BD439 BD441 4130 BD440 -BD441 -BD442 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| MJE2955T |
Silicon NPN Power Transistors
Silicon PNP Power Transistors MJE2955T
Silicon PNP Power Transistors MJE2955T
|
Savantic, Inc.
|
| PMD18K100 |
SILICON POWER DARINGTON TRANSISTORS
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
|
Central Semiconductor C...
|
| MJD112 MJD1121 MJD112T4 MJD117 ON1996 MJD112-1 |
Complementary Darlington Power Transistors
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| EMF5XV6T5 EMF5XV6T5G |
Power Management Dual Transistors
Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2N6437 2N6438 2N6437-D |
POWER TRANSISTORS PNP SILICON 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA
High-Power PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| 2SA963 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| 2SA483 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
