| PART |
Description |
Maker |
| GA100NA60U |
600V UltraFast 10-30 kHz Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| UFB120FA40 |
Insulated Ultrafast Rectifier Module 绝缘超快整流模块
400V 120A Ultrafast Doubler Diode in a SOT-227 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| UFB200FA40 |
Insulated Ultrafast Rectifier Module 绝缘超快整流模块
400V 200A Ultrafast Doubler Diode in a SOT-227 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FA38SA50LC |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
|
IRF[International Rectifier]
|
| XC4028XLA-9BG352C XC4013XLA-9BG256C XC4020XLA-9BG2 |
FPGA, 1024 CLBS, 18000 GATES, 227 MHz, PBGA352
FPGA, 576 CLBS, 10000 GATES, 227 MHz, PBGA256
FPGA, 784 CLBS, 13000 GATES, 227 MHz, PBGA256
FPGA, 4096 CLBS, 75000 GATES, 250 MHz, PBGA432
|
XILINX INC
|
| Q62703-Q3854 Q62703-Q2290 Q62703-Q3081 Q62703-Q251 |
Super TOPLED High-Current LED
Shielded Paired Cable; Number of Conductors:2; Number of Pairs:1; Leaded Process Compatible:Yes RoHS Compliant: Yes
DIODE FRED 200V 2X123A SOT-227
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Semiconductor G...
|
| XC3190A-4PPG175C |
FPGA, 320 CLBS, 5000 GATES, 227 MHz, PPGA175
|
XILINX INC
|
| 2SC2059KJM 2SC2059KJN 2SC2059KJP 2SC3082KSP 2SC308 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 600MA I(C) | SOT-23 晶体管|晶体管|叩| 32V的五（巴西）总裁| 600毫安一（c）| SOT - 23封装
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）| SOT - 23封装
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SOT-23
|
TT electronics Semelab, Ltd.
|
| NTF3055L108 NTF3055L108D NTF3055L108T1 NTF3055L108 |
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
|
ONSEMI[ON Semiconductor]
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
