| PART |
Description |
Maker |
| IS62LV1216LL IS62LV12816LL-10TI |
128 K x 16 CMOS SRAM(128 K x 16 CMOS静态RAM)
x16 SRAM x16的SRAM
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| LPC3240FET296 |
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller, Ethernet 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
|
NXP Semiconductors N.V.
|
| IS62LV1216BLL |
128 K x 16 Low Voltage, Ultra Low Power CMOS SRAM(128 K x 16 低压，极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
|
| M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| IDT72V8988 IDT72V8988DB IDT72V8988J IDT72V8988J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| HM628128BL HM628128BLFP8 HM628128BLFP8SL HM628128B |
1 M SRAM (128-KWORD X 8 BIT)
|
HITACHI[Hitachi Semiconductor]
|
| CY7C1345G-100AXC CY7C1345G-100AXI |
4-Mbit (128 K x 36) Flow-Through Sync SRAM
|
Cypress Semiconductor
|
| IDT70V658S15DR IDT70V657S10DRI IDT70V657S15DRI IDT |
Dual N-Channel Digital FET
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128/64/32K × 36 ASYNCHRONO美国双端口静态RAM
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
|
| HM629127HB HM629127HBJP-15 HM629127HBJP-20 HM62912 |
1 M HIGH SPEED SRAM(128-KWORD X 9-BIT)
|
Hitachi Semiconductor
|
| CY7C1351G-133AXC CY7C1351G12 CY7C1351G-100AXC |
4-Mbit (128 K × 36) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| MAX32590-L5J MAX32590-L5JW |
DeepCover Secure Microcontroller with ARM926EJ-S Processor Core
|
MAXIM - Dallas Semiconductor
|
