| PART |
Description |
Maker |
| FMM7G30US60N |
Compact & Complex Module
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMM6G50US60 |
Compact & Complex Module
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMS6G15US60S |
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMC6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| FMS6G10US60S |
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMC7G50US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FMC6G50US60 |
IGBT
Compact & Complex Module
Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
|
Fairchild Semiconductor Corporation
|
| RTP21005-11 |
This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
|
RFHIC
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| EDI8F32256C EDI8F32256C-MN EDI8G32256C-MM |
256Kx32 Static RAM CMOS, High Speed Module(256Kx32高速CMOS静态RAM模块)
SRAM Modules
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation
3M Company
|
| MIG20J806HA |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 25A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|5A一（c
|
Toshiba, Corp.
|
