| PART |
Description |
Maker |
| VSKCS440 VSKCS440_030P VSKCS440/030P |
Schottky Rectifier, 440 A
|
Vishay Siliconix
|
| RA55H4452M-101 RA55H4452M10 |
440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA13H4452M10 |
440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA07M4452M_06 RA07M4452M RA07M4452M-101 RA07M4452M |
RoHS Compliance , 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA55H4452M-101 RA55H4452M11 |
RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA55H4452M-101 |
RF MOSFET MODULE 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| LTC3780EGTRPBF LTC3780EUHTRPBF |
High Efficiency, Synchronous, 4-Switch Buck-Boost Controller; Package: SSOP; No of Pins: 24; Temperature Range: -40°C to 125°C 3 A SWITCHING CONTROLLER, 440 kHz SWITCHING FREQ-MAX, PDSO24
High Efficiency, Synchronous, 4-Switch Buck-Boost Controller; Package: QFN; No of Pins: 32; Temperature Range: -40°C to 125°C 3 A SWITCHING CONTROLLER, 440 kHz SWITCHING FREQ-MAX, PQCC32
|
Linear Technology, Corp.
|
| 1N6677UR-1 CDLL6677 CDLL0.2A20 CDLL0.2A30 CDLL0.2A |
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
Schottky Rectifier
|
Microsemi, Corp.
二极射频、小信号、开关、功
MICROSEMI[Microsemi Corporation]
|
| SR002 SR006 SR003 SR004 SR005 |
Rectifier: Schottky
(SR002 - SR006) 0.5 AMP. Schottky Barrier Rectifiers
From old datasheet system
0.5 AMP. Schottky Barrier Rectifiers 0.5安培。肖特基
|
ETC
TSC[Taiwan Semiconductor Company, Ltd]
Taiwan Semiconductor Co., Ltd.
|
| 10BQ030PBF VS-10BQ030PBF |
Schottky (Diodes & Rectifiers) 1.0 Amp 30 Volt
Schottky Rectifier, 1.0 A
|
Vishay Semiconductors
Vishay Siliconix
|
| M67749H 67749H |
440-470MHz / 12.5V / 7W / FM PORTABLE RADIO
440-470MHz, 12.5V, 7W, FM PORTABLE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NTLJF3117PTAG |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package 2.3 A, 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
