PART |
Description |
Maker |
K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
AS29F200T-55SC AS29F200T-55SI AS29F200T-55TC AS29F |
5V 256K x 8/128K x 8 CMOS FLASH EEPROM 128K X 16 FLASH 5V PROM, 55 ns, PDSO44 5V 256K x 8/128K x 8 CMOS FLASH EEPROM 128K X 16 FLASH 5V PROM, 55 ns, PDSO48 5V 256K x 8/128K x 8 CMOS FLASH EEPROM 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Alliance Semiconductor, Corp.
|
HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
BR24L64FJ-WE2 BR24L02FVM-WTR BR24L04NUX-WTR BR24L0 |
I2C BUS 64Kbit(8192x8bit) EEPROM I2C BUS 2Kbit(256x8bit) EEPROM I2C BUS 4Kbit(512x8bit) EEPROM I2C BUS 1Kbit(128x8bit) EEPROM I2C BUS 8Kbit(1024x8bit) EEPROM I2C BUS 16Kbit(2048x8bit) EEPROM I2C BUS 32Kbit(4096x8bit) EEPROM
|
ROHM
|
AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AT28C010E-12FM/883 AT28C010E-12EC AT28C010-12EM AT |
120NS, 32FLTPCK, 883C; LEV B COMPLIANT(EEPROM) 128K X 8 EEPROM 5V, 120 ns, CDFP32 128K X 8 EEPROM 5V, 120 ns, CQCC32 120NS, 32 LCC, MIL TEMP(EEPROM) 128K X 8 EEPROM 5V, 150 ns, CDFP32 128K X 8 EEPROM 5V, 200 ns, CDIP32 128K X 8 EEPROM 5V, 250 ns, CDIP32
|
Atmel, Corp. ATMEL CORP
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
M27C320 M27C320-100N1 M27C320-120M6 M27C320-120N3 |
2M X 16 OTPROM, 120 ns, PDSO48 2M X 16 OTPROM, 120 ns, PDSO44 2M X 16 OTPROM, 100 ns, PDSO48 32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
STMICROELECTRONICS ST Microelectronics
|
BR25H020FVM-2CE2 BR25H020FVM-2CTR BR25H020-2C BR25 |
Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM
|
Rohm
|