PART |
Description |
Maker |
HI-506A07 HI3-0508A-5Z |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
ADG506A ADG506ABQ ADG506AKN ADG506AKP ADG506AKR AD |
CMOS ± 15 V 8 Channel Analog Multiplexer CMOS 15 V 8 Channel Analog Multiplexer CMOS 8-/16-Channel Analog Multiplexers 16-CHANNEL, SGL ENDED MULTIPLEXER, PQCC28 Portable Work Lamp, 3.5 in x 5 in [76,2 mm x 127,0 mm], Spot Beam Pattern, 12 Vdc/50 W/4 A 8-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDIP28 16-Channel Multiplexer (Superior DG506A Replacement); Package: PLCC; No of Pins: 28; Temperature Range: Commercial 16-CHANNEL, SGL ENDED MULTIPLEXER, PQCC28
|
http:// AD[Analog Devices] Analog Devices, Inc.
|
AK4628 AK4628VQ |
2-channel 96KHz ADC 8-channel 192KHz DAC HIGH PERFORMANCE MULTI CHANNEL AUDIO CODEC
|
AKM[Asahi Kasei Microsystems]
|
FDS6990AS FDS6990AS_NL FDS6990ASNL |
Dual 30V N-Channel PowerTrench SyncFET 7500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
DMN5L06VAK DMN5L06VK-7 |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 280 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Inc. Diodes, Inc.
|
6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array 硅N-Channel/P-Channel功率MOS FET阵列
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
IXTL2X240N055T |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5 N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
SIZ730DT-T1-GE3 |
N-Channel 30 V (D-S) MOSFETs 35 A, 30 V, 0.0053 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR, 6 PIN
|
Vishay Siliconix Vishay Intertechnology, Inc.
|
2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
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