| PART |
Description |
Maker |
| PP0800EB PP1500EA |
Direct ProTek Replacement:PP0800EB 直接太克替代：PP0800EB
Direct ProTek Replacement:PP1500EA
20 A, SILICON SURGE PROTECTOR, TO-92
|
Air Cost Control
PROTEK DEVICES
|
| K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7 |
8M X 18 DIRECT RAMBUS DRAM, 45 ns, PBGA62
K4R271669A-N(M):Direct RDRAMData Sheet
|
Samsung Electronic
|
| C460DA1000-0327 C460DA1000-0325 C460DA1000-0311 C4 |
Direct Attach LED Technology Rectangular LED RF Performance
LEDs
Direct Attach DA1000 LEDs
|
Cree, Inc
Marktech Corporate
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| HYR1612820 HYR183220G-840 HYR1612820G-653 HYR18642 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) 直接的RDRAM RIMM的模块（44兆RDRAMs
CONN HEADER .100 DUAL STR 72POS
CONN HEADER .100 DUAL R/A 72POS
128M X 16 DIRECT RAMBUS DRAM MODULE, 2.06 ns, DMA184
|
INFINEON[Infineon Technologies AG]
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC-4R128FKK6K-840 MC-4R128FKK6K |
128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA232
128MB 32-bit Direct Rambus DRAM RIMM Module
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EBR12EC8ABSA-8C EBR12EC8ABSA-AD |
128MB Direct Rambus DRAM SO-RIMM Module
128MB Direct Rambus DRAM SO-RIMM?/a> Module
128MB Direct Rambus DRAM SO-RIMM垄芒 Module
|
Elpida Memory
|
| EBR12UC8ABKD-8C EBR12UC8ABKD-AD EBR12UC8ABKD-AE EB |
128MB 32-bit Direct Rambus DRAM RIMM?/a> Module
128MB 32-bit Direct Rambus DRAM RIMM Module
128MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
|
Elpida Memory
|
| EBR25UC8ABKD-8C EBR25UC8ABKD-AD EBR25UC8ABKD-AE EB |
256MB 32-bit Direct Rambus DRAM RIMM?/a> Module
256MB 32-bit Direct Rambus DRAM RIMM Module
256MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
|
Elpida Memory
|
