PART |
Description |
Maker |
STL13NM60N |
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT?/a> (8x8) HV MDmesh?/a> II Power MOSFET
|
STMicroelectronics
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CM75DU-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM50DY-12H |
Dual IGBTMOD 50 Amperes/600 Volts 50 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
CM75BU-12H |
Four IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
P004004BL |
Standard Computer Power Extension Cord, 10A, 18AWG (IEC-320-C14 to IEC-320-C13, Blue Plugs), 4-ft
|
Tripp Lite. All Rights ...
|
P01406N |
Standard Laptop Power Adapter Cord, 2.5A, 18AWG (IEC-320-C14 to IEC-320-C5), 6-in
|
Tripp Lite. All Rights ...
|
IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR Intersil Corporation
|
VSKT320 VSKD250-04 VSKD250-08 VSKD250-12 VSKD250-1 |
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) 320 A, 1200 V, SILICON, RECTIFIER DIODE 250 A, 1600 V, SILICON, RECTIFIER DIODE 320 A, 800 V, SILICON, RECTIFIER DIODE 320 A, 400 V, SILICON, RECTIFIER DIODE 320 A, 1600 V, SILICON, RECTIFIER DIODE 250 A, 1200 V, SILICON, RECTIFIER DIODE 250 A, 800 V, SILICON, RECTIFIER DIODE
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
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