| PART |
Description |
Maker |
| TIM3742-8SL-341 |
IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM1314-30L09 |
HIGH POWER P1dB=45.0dBm at 13.75GHz to 14.5GHz
|
Toshiba Semiconductor
|
| HMC432E |
Ultra Low SSB Phase Noise: -148 dBc/Hz
|
Analog Devices
|
| MAAP-008171-TR3000 MAAP-008171 MAAP-008171-001SMB |
High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB
|
MACOM[Tyco Electronics]
|
| STGIPS10K60A |
IGBT intelligent power module (IPM) 10 A, 600 V, DBC isolated SDIP-25L molded
|
STMicroelectronics
|
| STGIPS20K60 |
IGBT intelligent power module (IPM) 17 A, 600 V, DBC isolated SDIP-25L molded
|
STMicroelectronics
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
| P1000-1215 PDFP1000-1215 |
1 kWatt RF Pout
Input and Output Matched to 50 Ohms
|
Advanced Semiconductor
|
| BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
