PART |
Description |
Maker |
MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA7 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
Elpida Memory, Inc.
|
MC-4516CB646XF-A10 MC-4516CB646XF-A80 MC-4516CB646 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
MC-4516CA727PF-A75 MC-4516CA727 MC-4516CA727EF-A75 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
MC-4516CD641PS-A80 MC-4516CD641PS MC-4516CD641ES M |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM 1,600字,64位同步动态随机存储器模块以便内存
|
NEC, Corp. NEC Corp. NEC[NEC]
|
M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 |
From old datasheet system 16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
UPD23C16000BLGY-XXX-MJH UPD23C16000BLGY-XXX-MKH UP |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) 1,600位掩膜可编程ROM00万字位(字节模式 100万字6位(字模式)
|
NEC, Corp. NEC Corp.
|
UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
UPD23C16040BLGX UPD23C16040BLGY-MJH UPD23C16040BL |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
MR27V12852R MR27V12852L |
8M-Word × 16-Bit or 16M-Word × 8-Bit Page mode P2ROM
|
List of Unclassifed Manufacturers
|
MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|