PART |
Description |
Maker |
CXK79M36C162GB-5 |
18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36) 35.7 1x2Lp HSTL高速(512KB的36同步静态存储器
|
Sony, Corp.
|
GS8170DD36C-250I GS8170DD36C GS8170DD36C-200 GS817 |
18Mb Common I/O DDR SigmaRAMs 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
|
GSI Technology
|
GS8170DD36C-333 GS8170DD36C-333I GS8170DD36C-300I |
18Mb Σ1x2Lp CMOS I/O Double Data Rate SigmaRAM
|
GSI Technology http://
|
GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM 1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM 18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
GS8160Z36T-250I GS8160Z18T GS8160Z18T-133 GS8160Z1 |
18Mb Burst SRAMs 18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8 |
18Mb Burst SRAMs 18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|
IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc. Integrated Silicon Solu...
|
GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18,为512k × 36,为512k × 36 35.7同步突发静态存储器 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
5962-8967201LA |
Dual 12-Bit Double-Buffered Multiplying CMOS D/A Converter
|
Analog Devices
|
IL2533N IL2533 IL2533D |
MULTISTANDARD CMOS IC OF SINGLE CHIP PHONE WITH DOUBLE SOFT LIMITATION
|
INTEGRAL[Integral Corp.]
|