| PART |
Description |
Maker |
| EVAL-AD5143DBZ AD5124 AD5122A AD5121 AD5144A AD512 |
Quad Channel, 128-/256-Position, I2C Nonvolatile Digital Potentiometer
|
Analog Devices
|
| AD5110BCPZ10-1-RL7 AD5110BCPZ10-500R7 AD5110BCPZ10 |
Single-Channel, 128-/64-/32-Position, I2C, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer
|
http://
Analog Devices
|
| AD7376 AD7376AN10 AD7376AN100 AD7376AN1M AD7376AN5 |
High-Voltage, 128-Position, Digital Potentiometer
-15 V Operation Digital Potentiometer
|
AD[Analog Devices]
|
| SS-73100-030 |
HIGH PERFORMANCE UNSHIELDED STACK JACK, 16PORTS (8 ON 8) EIGHT CONTACT, EIGHT POSITION, 50 MICRO INCHES GOLD 128 CONTACT(S), FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SOLDER, JACK
|
Bel Fuse, Inc.
Bel Fuse Inc.
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| GMRC6 |
GIANT MAGNETO RESISTIVE POSITION POSITION SENSOR
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 351HE0A1ZA 351HE1A1ZA 351HE2A1ZA 351HE3A1ZA 351HE0 |
1/2 mm)
Single Turn Bushing Mount Hall Effect Sensor in Size 09 (22.2 mm)
POSITION, ROTARY SENSOR-HALL EFFECT, 270deg ROHS COMPLIANT PACKAGE
POSITION, ROTARY SENSOR-HALL EFFECT, 360deg
POSITION, ROTARY SENSOR-HALL EFFECT, 90deg
POSITION, ROTARY SENSOR-HALL EFFECT, 180deg
|
Vishay Siliconix
Vishay Intertechnology, Inc.
VISHAY SPECTROL
|
| W541C261 |
4BIT MICROCONTROLLER, 2K 6 ROM, 128 RAM 128 -DOT LCD
|
Winbond Electronics Corp
|
| MT8981D MT8981DE MT8981DP MT8981 |
128 x 128 Channels (4 TDM Streamsat 2.048 Mbps) Non-blocking Digital Switch
|
Zarlink Semiconductor Inc
|
|
