| PART |
Description |
Maker |
| MR5460 MR5461 |
(MR5xxx) INTEGRATED T-1 RESISTOR LAMPS 5 VOLT AND 12 VOLT SERIES
|
QT Optoelectronics
|
| IDT72V273L6PF IDT72V243 IDT72V223 IDT72V253 IDT72V |
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO 2K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO 4K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO 3.3伏高密度SUPERSYNC窄总线先进先出
RECEPTACLE, EMI, BACKSHELL, 360DEG; Gender:Receptacle; Ways, No. of:1; Series:RJF TV RoHS Compliant: No
PLUG ASSEMBLY, 360DEG, EMI, BACKSHELL; Gender:Plug; Ways, No. of:1; Series:RJF TV RoHS Compliant: No
|
Integrated Device Technology, Inc.
Integrated Device Technolog...
Integrated Device Techn...
|
| 0234002.MXP 0234003.MXE- 0234003.MXEP 023406.3MXP |
234 Series, 5 x 20 mm, Medium-Acting Fuse
MEDIUM BLOW ELECTRIC FUSE, 1.25A, 250VAC, 100A (IR), INLINE/HOLDER
|
Littelfuse
|
| ZXTP2039FTC ZXTP2039F ZXTP2039FTA |
SOT23 80 volt PNP silicon planar medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| ZXTP2041FTC ZXTP2041F ZXTP2041FTA |
SOT23 40 volt PNP silicon planar medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| TISP3125F3P-S TISP3150F3P-S |
TISP Thyristor Overvoltage Protectors Medium Volt Dual Bidirectional 125 V, 5.7 A, SILICON SURGE PROTECTOR, MS-001BA
TISP Thyristor Overvoltage Protectors Medium Volt Dual Bidirectional 150 V, 5.7 A, SILICON SURGE PROTECTOR, MS-001BA
|
Bourns, Inc.
|
| HMC442 |
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17.5 - 25.5 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2N2369ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
