| PART |
Description |
Maker |
| BLM6G22-30 BLM6G22-30G |
Product description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
|
NXP Semiconductors N.V.
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 7703403UA 7703401YA 77034042A 7703404MA 7703404NA |
Negative Adjustable Voltage Regulator
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
15 HZ, 90DB REJECTION BTW 59 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, T/R
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
Low-cost volatile, Digital Potentiometer, -40C to 125C, 8-SOIC 150mil, TUBE
PRODUCT TO FREQUENCY CONVERTER WHICH IS USED TO POWER METERING APLICATIONS, -40C to 85C, 24-SSOP 208mil, TUBE 积极可调电压稳压
18 BIT DEL-SIG A/D CONVERTER, -40C to 125C, 6-SOT-23, T/R 积极可调电压稳压
Positive Adjustable Voltage Regulator 积极可调电压稳压
ENERGY METER IC, GAIN 1:16, 500:1 DYNAMIC RANGE, -40C to 85C, 24-SSOP 208mil, T/R 积极可调电压稳压
|
International Rectifier, Corp.
TE Connectivity, Ltd.
Kingbright, Corp.
NIC Components, Corp.
|
| ES1938 ES1938S |
PCI AudioDrive Solution Product Brief
ConsumerIC
PCI Audio Drive Solution Product Brief
|
ESS Technology
Electronic Theatre Controls, Inc.
|
|
