| PART |
Description |
Maker |
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
| STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STP6NA80FI STP6NA80 3071 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N沟道增强模式快速功率MOS晶体管（不适用沟道增强模式快速功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STP5NA60 STP5NA60FI 3065 |
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BST100 |
P-channel enhancement mode vertical D-MOS transistors(P娌??澧?己????茨-MOS?朵?绠?
|
Philips Semiconductors
NXP Semiconductors
|
| STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 27A 0.180 Ohm
|
Advanced Power Technology, Ltd.
|
| PHP206 |
Dual P-channel enhancement mode MOS transistor 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STP80N06-1 STP80N06-10 4888 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| APT1201R2SLL APT1201R2BLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1200V 12A 1.200 Ohm
|
Advanced Power Technology Ltd.
|
| APT30M36B2LL APT30M36LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 300V 84A 0.036 Ohm
|
Advanced Power Technology Ltd.
|
