PART |
Description |
Maker |
1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N |
(1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
http:// RECTRON[Rectron Semiconductor]
|
1N4007GPP 1N4006GPP |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1.0 AMP, 50 THRU 1000 VOLTS 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp. Vishay Intertechnology, Inc.
|
DR200G05 |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
|
EIC discrete Semiconductors
|
SMN1D |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
|
EIC discrete Semiconduc...
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1N5394G 1N5399G 1N5391G 1N5392G 1N5393G 1N5395G 1N |
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS 玻璃钝化结的硅整
|
Electronics Industry Public Company Limited EIC[EIC discrete Semiconductors]
|
GF1J GF1M |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
|
Shenzhen Luguang Electronic Technology Co., Ltd Shenzhen Luguang Electr...
|
1SMB592604 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
|
Pan Jit International Inc.
|
1N5926B04 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
|
Pan Jit International Inc.
|
1N5348B04 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
|
Pan Jit International Inc.
|
1N4728A04 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
|
Pan Jit International Inc.
|
15KW160 15KW160A 15KW260 15KW260A 15KW240 15KW240A |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 220.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 110.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 200.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 170.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor 180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|