PART |
Description |
Maker |
LC321667BJ-80 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Sanyo Electric Co., Ltd.
|
NN51V4265AJ-40 NN51V4265AJ-45 NN51V4265ALTT-45 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
HY512264JC-70 HY512264JC-60 HY512264SLJC-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
DB Lectro, Inc.
|
GM71C4263DLJ-80 GM71C4263DT-70 GM71C4263DLT-70 GM7 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG, Corp.
|
UPD42S4210ALE-50 UPD424210AG5-70 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
TE Connectivity, Ltd.
|
HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM 2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics International Business Machines, Corp.
|
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns 4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns 4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM 4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM -4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20 1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp. ALLIANCE SEMICONDUCTOR CORP
|
GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
MSC2313258A-XXDS2 MSC2313258A-XXBS2 MSC2313258A |
1048576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位DRAM模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|