PART |
Description |
Maker |
C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
2MBI100J-060 |
TRANSISTOR IGBT POWER MODULE
|
Fuji Semiconductors
|
MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
FZ1200R17KE3 |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C) From old datasheet system
|
Fuji Semiconductors, Inc.
|
GP1600FSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.6KA I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 1.6KA一(c
|
Dynex Semiconductor, Ltd.
|
GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
ITT, Corp.
|
IDT5993A-5QI IDT5993A-5Q 5993A_DATASHEET IDT5993A- |
From old datasheet system IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO28 Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五(巴西)国际消费电子展|5A一(c
|
TE Connectivity, Ltd.
|