PART |
Description |
Maker |
R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit) R1LP0408C-I Series Datasheet 78K/AUG.01.03 Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) Memory>Low Power SRAM
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor] Renesas
|
R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM 4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
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LPC1225 LPC1227 LPC1224 LPC1226 LPC1224FBD48 LPC12 |
32-bit ARM Cortex-M0 microcontroller; up to 128 kB flash and 8 kB SRAM Cortex-M0 with up to 48 kB flash, 4 kB SRAM, RTC, comparator, 10-bit ADC, CRC, DMA and more Cortex-MO,最48kB 闪存kB静态随机存储器,时钟芯片,比较器,10位ADC,CRC检测,内存直接存取 96kB flash, 8kB SRAM, LQFP48 package 128kB flash, 8kB SRAM, LQFP48 package
|
NXP Semiconductors N.V.
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GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
UPD444008 UPD444008LE-12 UPD444008LE-10 UPD444008L |
512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
|
NEC Corp.
|
R1LV1616HSA-5SI R1LV1616H-I R1LV1616HSA-4LI R1LV16 |
Memory>Low Power SRAM Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
AS7C31025B AS7C31025B-20TJIN AS7C31025B-10JC AS7C3 |
SRAM - 3.3V Fast Asynchronous 128 x 64 pixel format, LED or EL Backlight available 8-Bit Parallel-Load Shift Registers 16-TVSOP -40 to 85 8-Bit Parallel-Load Shift Registers 16-SSOP -40 to 85 8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85 3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
|
GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
UT62256SC-70 UT62256 UT62256SC-35 UT62256SC-35L UT |
32K X 8 BIT LOW POWER CMOS SRAM 32K的8位低功耗CMOS SRAM From old datasheet system
|
UTRON Technology Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位)低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|