| PART |
Description |
Maker |
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| 5082-2207 50822207 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
|
| 5082-2817 |
MEDIUM BARRIER SCHOTTKY DIODE
|
http://
ASI[Advanced Semiconductor]
|
| 5082-2209 |
SCHOTTKY MEDIUM BARRIER DIODE
|
ASI[Advanced Semiconductor]
|
| DME3019-325-008 DME3013-131-012 DMJ3107-364-008 DM |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|
| 1N1199ASERIES 1N3670ASERIES 1N1203A 1N1202A 1N3673 |
50V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES
13 AM MEDIUM POWER SILICON RECTIFIER DIODES
12 AM MEDIUM POWER SILICON RECTIFIER DIODES
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
IRF[International Rectifier]
|
| IRF7524D1 |
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
HEXFET? Power MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
|
