PART |
Description |
Maker |
BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
326773-001 |
Intel? Xeon? Processor E3-1200 v2 Product Family
|
Intel Corporation
|
APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. Advanced Power Technology
|
CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
STTH6012 STTH6012W |
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-247 Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
STTH1212G-TR STTH1212 STTH1212D STTH1212G |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR 1125 A, 1200 V, SCR, TO-200AB 1950 A, 800 V, SCR, TO-200AC 5087 A, 1600 V, SCR 5087 A, 1800 V, SCR 2749 A, 1800 V, SCR 2749 A, 800 V, SCR 2110 A, 3000 V, SCR 2749 A, 600 V, SCR 1895 A, 1000 V, SCR, TO-200AC 2268 A, 1200 V, SCR 5260 A, 1200 V, SCR 1690 A, 800 V, SCR, TO-200AC 2749 A, 1600 V, SCR 5260 A, 1600 V, SCR 2749 A, 1000 V, SCR 1765 A, 1200 V, SCR, TO-200AC 1765 A, 1600 V, SCR, TO-200AC 2749 A, 1200 V, SCR 2749 A, 400 V, SCR 1030 A, 800 V, SCR, TO-200AB 1715 A, 600 V, SCR, TO-200AC 3140 A, 600 V, SCR 2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
|
CM75TF-24H |
Six-IGBT IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor 55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz BJT
|
GHZTECH[GHz Technology]
|
X37120B1N1 |
Single Phase Bridge; Package: SEE_FACTORY; IO/ Leg (A): 80; VR / Leg (V): 1200; IFSM / Leg (A): 1500; 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
|
V850E1 V850E_SV2 V850E_IA1 V850E_IA2 V850E_IA3 V85 |
V850E/IA2 Flash product ROM: 128 KB, RAM: 6 KB V850E/IA2 Mask product ROM: 128 KB, RAM: 6 KB V850E/IA3 Flash product ROM: 256 KB, RAM: 12 KB ROM-less version; Internal RAM: 4K bytes 32-bit RISC single-chip microcontroller V850E/SV2 V850E/IA4 Flash memory product ROM: 256 KB, RAM: 12 KB 32-Bit Microprocessor Core
|
NEC[NEC]
|
|