| PART |
Description |
Maker |
| BCW89 |
Low current (max. 100 mA). Low voltage (max. 60 V).Collector-base voltage VCBO -80 V
|
TY Semiconductor Co., Ltd
|
| BSR17A |
High current (max. 100 mA). Low voltage (max. 40 V). Emitter-base voltage VEBO 6 V
|
TY Semiconductor Co., Ltd
|
| BC860C BC860 |
PNP General Purpose Transistor
Low current (max. 100 mA). Low voltage (max. 45 V).
|
TY Semicondutor
TY Semiconductor Co., L...
|
| BCX52-10 BCX52-16 BCX51 BCX51-10 BCX53-10 |
High current (max. 1 A). Low voltage (max. 80 V). Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
| NCV2903DR2G |
Low Offset Voltage Dual Comparators DUAL COMPARATOR, 15000 uV OFFSET-MAX, 1500 ns RESPONSE TIME, PDSO8
|
ON Semiconductor
|
| STG3856 |
Low Voltage 1.0?/a> Max Dual SP3T Switch With Break Before Make Feature
|
STMicroelectronics
|
| LTC3701EGN LTC3701EGNPBF LTC3701-15 |
2-Phase/ Low Input Voltage/ Dual Step-Down DC/DC Controller
2-Phase, Low Input Voltage, Dual Step-Down DC/DC Controller; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 125°C 1 A DUAL SWITCHING CONTROLLER, 890 kHz SWITCHING FREQ-MAX, PDSO16
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STG4259 STG4259BJR |
Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection
Low voltage 0.3ヘ max dual SPDT switch with break-before-make feature and 15KV ESD protection
|
STMicroelectronics
|
| M5218AFP M5218AL M5218AP M5218FP M5218P M5218 M521 |
DUAL OP-AMP, 6000 uV OFFSET-MAX, 7 MHz BAND WIDTH, PDIP8
DUAL OP-AMP, 6000 uV OFFSET-MAX, 7 MHz BAND WIDTH, PSIP8
From old datasheet system
DUAL LOW-NOISE OPERATIONAL AMPLIFIERS(DUAL POWER SUPPLY TYPE)
Dual Low Noise Operational Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
