| PART |
Description |
Maker |
| K6R4016V1C-C K6R4016V1C-I_C-P K6R4016V1C-C10 K6R40 |
256Kx16 Bit High Speed Static RAM(3.3V Operating)
|
Samsung semiconductor
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM6164000B KM6164000BLI-L KM6164000BL-L KM6164000B |
256Kx16 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT7130SA20PF IDT7130SA25PF IDT7130SA IDT7130SA25C |
Dual Integrated Solenoid Driver; Package: MLP 8x12; No of Pins: 18; Container: Tape & Reel
30V N-Channel PowerTrench SyncFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQCC48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CQFP48
Single P-Channel Logic Level PowerTrench MOSFET; Package: SOIC; No of Pins: 8; Container: Tape & Reel 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
Single P-Channel Logic Level PowerTrench MOSFET 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQFP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, PDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 25 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 100 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM 1K X 8 DUAL-PORT SRAM, 35 ns, CQFP48
Asynchronous Communications Element With Autoflow Control 48-LQFP 0 to 70 高速每1000 × 8双端口静态RAM
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| BS616LV4018 BS616LV4018EI BS616LV4018AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16
Asynchronous 4M(256Kx16) bits Static RAM
From old datasheet system
|
Electronic Theatre Controls, Inc.
Brilliance Semiconductor
BSI
ETC[ETC]
List of Unclassifed Manufacturers
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns
16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
| CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM
131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY
Vishay Intertechnology, Inc.
|
| K6R4008V1C |
512Kx8 Bit High Speed Static
|
Samsung semiconductor
|
