| PART |
Description |
Maker |
| F10-1D22-BKB F10-4E68-HM7 |
F10 & F50 Flow Switches
|
Magnetrol International, Inc.
|
| F10-1D22-BKK F50-1A2F-JEE |
Flow Switches
|
Magnetrol International, Inc.
|
| M-201-T43 M-201-T M-201-T31 M-201-T33 M-201-T41 |
High flow,adjustable flow switch with right-angle flow
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 1571983-1 ADF0404 1-1825002-3 ADF0204 ADF02STTR04 |
Switches Core Program
DIP Switches - GD Series, High Feature Line
DIP, Rotary DIP, SIP Switches and DIP Shunts - Standard; GDH02S04=DIP SWITCH ( Tyco Electronics )
Slide Switches
Pushbutton Switches
Snap Action Switches
|
Tyco Electronics
|
| 17570 17570-5 |
HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| 15987-8 15987 |
HTSNK C X-FLOW. .911 LOW FLOW. THREADED
HTSNK, C X-FLOW. .911 LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
| 17574 17574-5 |
HTSNK. C X-FLOW .9H LOW FLOW. THRU HOLE
HTSNK. C X-FLOW, .9H LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| MAX312 MAX312CUE MAX312ESE MAX312CSE MAX314MJE MAX |
CLAMP
10 / Quad / SPST / CMOS Analog Switches
10 Quad SPST CMOS Analog Switches
10, Quad, SPST, CMOS Analog Switches
10? Quad, SPST, CMOS Analog Switches
8 PORT MODEM SHARING DEVICE SC
CABLE, COAX, 9248, PER M; Impedance:75R; Conductor make-up:1/1.02mm; Diameter, External:6.86mm; Material, conductor:Copper; Material, primary insulation:Polyethylene; Coaxial cable type:RG6A/U; Alpha type number:9804C EQUIVALENT; RoHS Compliant: Yes
10з, Quad, SPST, CMOS Analog Switches QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO16
10蟹, Quad, SPST, CMOS Analog Switches
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
