PART |
Description |
Maker |
AT29C257-70 AT29C257-15JC AT29C257-12JC AT29C257-9 |
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO -55 to 125 256K 32K x 8 5-volt Only CMOS Flash Memory 256K 32K的8 5伏只有闪存的CMOS 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 32K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Atmel Corp. Atmel, Corp.
|
UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
AT29LV256 AT29LV256-15JC AT29LV256-15JI AT29LV256- |
256K 32K x 8 3-volt Only CMOS Flash Memory
|
ATMEL[ATMEL Corporation]
|
UPD43256B00 UPD43256B-XXL UPD43256B-XXLL UPD43256B |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 32K X 8 STANDARD SRAM, 100 ns, PDSO28 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
AT29C256-70PI |
256K (32K x 8) 5-volt Only Flash Memory(278.93 k) 256K2K的8伏只有闪存(278.93十一
|
Everlight Electronic Co., Ltd.
|
UPD43256BGX-70L-EKA UPD43256BGX-A10-EKA UPD43256BG |
256K-bit(32K-word x 8-bit) Low power SRAM
|
NEC
|
UPD43256BGW-70X-9JL-A UPD43256BGW-70X-9KL-A UPD432 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
27C256TRPDI-12 27C256TRPDI-15 27C256TRPDI-20 27C25 |
256K (32K x 8-Bit) OTP EPROM
|
Maxwell Technologies
|