| PART |
Description |
Maker |
| AM4J-67206L-12 AM4J-67206L-25 AM4J-67206V-15 AM4J- |
90NS, LCC, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
90NS, TSOP, IND TEMP, GREEN(EEPROM)
120NS, PLCC, AUTO TEMP(EEPROM)
120NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
120NS, LCC, 883C; LEV B FULLY COMPLIANT(EEPROM)
8-Bit Video ADC
Switched-Capacitor Voltage Converter with Regulator; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????)
10 Bit, 25MSPS, 135mW ADC
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 5-SOT-23 -40 to 85
x9 Asynchronous FIFO X9热卖异步FIFO
Single Supply RS232C Line Driver/Receiver(氓??莽?碌忙潞?RS232C 莽潞驴忙?露氓??氓?篓茂录?2氓??2忙?露茂录?)
|
Kingbright, Corp.
|
| AM24S-3.3-13 AM48S-3.3-13 AM48S-2.5-10 AM48S-15-20 |
7ns, Low Power, Single Supply, Ground-Sensing Comparator; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
90NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
Analog IC
90NS, PLCC, IND TEMP(EEPROM)
70NS, PDIP, COM TEMP(EEPROM) 模拟IC
|
Glenair, Inc.
|
| K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4 |
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| M28W231-120N1TR M28W231-120N6TR M28W231-180N5TR M2 |
256K X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, TSOP-40
256K X 8 FLASH 12V PROM, 180 ns, PDSO40 10 X 20 MM, TSOP-40
256K X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, TSOP-40
256K X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, TSOP-40
|
ST Microelectronics
|
| K4H510838D-UC/LA2 K4H510838D-UC/LB0 K4H510838D-UC/ |
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 500mW 8.8Vz 20mA-Izt 0.025 0.1uA-Ir 7 SOD-123 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-323 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 150mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 500mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-523 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| RJ80536GE0412M |
M Processor on 90ns Process
|
Intel
|
| S29GL032M10BBIR10 S29GL032M10BBIR12 S29GL032M10BBI |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142-EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
|
Spansion, Inc.
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS29LV400T-90TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 90ns access time
|
Alliance Semiconductor
|
| HM-65162/883 |
RAM, 2Kx8, Asynchronous, CMOS Static, Access Time 70/90ns Max
|
Intersil
|
| MAX8868EUK33-T MAX8867EUK30-T |
VOLT REGULATOR|FIXED| 3.3V|CMOS|TSOP|6PIN|PLASTIC
VOLT REGULATOR|FIXED| 3V|CMOS|TSOP|6PIN|PLASTIC 3 V FIXED POSITIVE LDO REGULATOR, 0.12 V DROPOUT, PDSO5
|
Maxim Integrated Products, Inc.
|
|
