PART |
Description |
Maker |
BZX55C2V4 BZX55C39 BZX55C43 BZX55C56 BZX55C9V1 BZX |
Zeners 5.1V, 0.5W Zener Diode 7.5V, 0.5W Zener Diode 4.7V, 0.5W Zener Diode 9.1V, 0.5W Zener Diode 3.9V, 0.5W Zener Diode 6.8V, 0.5W Zener Diode 6.2V, 0.5W Zener Diode 5.6V, 0.5W Zener Diode 33V, 0.5W Zener Diode 4.3V, 0.5W Zener Diode 3.3V, 0.5W Zener Diode 10V, 0.5W Zener Diode 11V, 0.5W Zener Diode 13V, 0.5W Zener Diode 12V, 0.5W Zener Diode 8.2V, 0.5W Zener Diode
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FAIRCHILD[Fairchild Semiconductor]
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NTE5061A NTE5062A NTE5063A NTE5064A NTE5065A NTE50 |
Zener diode, 1 watt, -5% tolerance. Nominal zener voltage Vz = 68V. Zener test current Izt = 3.7mA. Zener Diode, 1 Watt ±5% Tolerance Zener Diode, 1 Watt 【5% Tolerance Zener Diode 1 Watt 5% Tolerance Zener Diode, 1 Watt 5% Tolerance Zener Diode / 1 Watt 5% Tolerance surface mount silicon Zener diodes 硅表面贴装齐纳二极管 Zener Diode, 1 Watt % Tolerance 10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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NTE[NTE Electronics] Mitsubishi Electric, Corp. NTE Electronics, Inc.
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CMS1006 CMS10 CMS10-06 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD Switching Mode Power Supply Applications Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.5 to 14.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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Toshiba Semiconductor Toshiba Corporation
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BZV90-8V2 BZV90 BZV90-C11 BZV90-C16 BZV90-C20 BZV9 |
BZV90 series; Voltage regulator diodes From old datasheet system ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% ZENER DIODE 1.3W SMD 8.2V ZENER DIODE 1.3W SMD 27V SMD/TO-223 1.3W Z-DIODE ZENER DIODE 1.3W SMD 5.6V ZENER DIODE 1.3W SMD 6.2V ZENER DIODE 1.3W SMD 5.1V 3 V supervisor with battery switchover 稳压二极管的1.3W贴片20V
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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CMH02 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 开关电源的应用 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Switching Mode Power Supply Applications
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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1M110ZS10 1M120ZS10 1M130ZS10 1M150ZS10 1M160ZS10 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 1% tolerance. 1.0 WATT SURMETIC 30 SILICON ZENER DIODES 4 PR #24 DATATWIST PVC 1701A CMP 4BP24 BK 1000F REELEX 1701A CMP 4BP24 GY 1000F SP 1.0瓦SURMETIC 30硅稳压二极管 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -5% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -1% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -2% tolerance. 1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -2% tolerance.
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc. Motorola Mobility Holdings, Inc.
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BZV48C9V1 BZV48C10 BZV48C100 BZV48C11 BZV48C110 BZ |
124 to 141V; P(tot): 5W; zener diode 104 to 116V; P(tot): 5W; zener diode 114 to 127V; P(tot): 5W; zener diode 94 to 106V; P(tot): 5W; zener diode ZENER DIODES
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] http://
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STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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意法半导
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DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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