PART |
Description |
Maker |
MDD250-16N1 MDD250 MDD250-08N1 MDD250-12N1 MDD250- |
High Power Diode Modules 290 A, 1200 V, SILICON, RECTIFIER DIODE Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM60SZ-6S RM60SZ-6S/-6R RM60SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE Fast Recovery Diode Modules, F Series (for welding)
|
Mitsubishi Electric Corporation
|
MCC44 MCC44-08IO1B MCC44-08IO8B MCC44-12IO1B MCC44 |
Thyristor Modules Thyristor/Diode Modules 80 A, 1800 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 1600 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 1200 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 800 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 1400 V, SCR, TO-240AA Thyristor and Rectifiers Modules
|
IXYS, Corp. IXYS Corporation
|
RM250CZ-24 RM250DZ-24 RM250UZ-24 RM250CZ-2H RM250D |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM15TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
VBO65-12NO7 VBO65-16NO7 VBO65-08NO7 VBO65-14NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VBO21-12NO7 VBO21-08NO7 VBO21-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS Corporation
|
VUO27-06NO7 VUO27-08NO7 VUO27-12NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|