| PART |
Description |
Maker |
| HFR8A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR15A06F |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
YENYO TECHNOLOGY Co., L...
|
| HFR8A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| 60S05-13 |
6 Amp Axial-Lead Glass Passivated Rectifier 50 - 1000 Volts Glass Passivated Chip
|
Micro Commercial Compon...
|
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| 1N4003G-A 1N4003G-B 1N4001G-A 1N4001G-B 1N4002G-B |
1.0A GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Anderson Power Products, Inc.
Diodes, Inc.
|
| HER30-1500G |
Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞1500V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?500V CURRENT 3.0A
|
Gulf Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
