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MTB4N80E-D - TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

MTB4N80E-D_2666362.PDF Datasheet


 Full text search : TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate


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MTB9N25E MTB9N25E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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From old datasheet system
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MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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From old datasheet system
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MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
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From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
ON Semiconductor
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MOTOROLA[Motorola Inc]
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MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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From old datasheet system
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From old datasheet system
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From old datasheet system
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