| PART |
Description |
Maker |
| CY7C1243KV18-400BZC CY7C1243KV18-450BZC CY7C1245KV |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress
|
| R1QKA3618CBG R1QKA3636CBG R1QLA3636CB R1QLA3618CB |
36-Mbit QDRII SRAM 4-word Burst
36-Mbit QDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| CY7C1562XV18-450BZXC |
72-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| UPD44325362F5-E50-EQ2 UPD44325082 UPD44325082F5-E4 |
36M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44165364F5-E60-EQ1 UPD44165084 UPD44165084F5-E4 |
18M-BIT QDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
|
| CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| R1Q2A3636ABG60RB0 R1Q3A3636ABG60RB0 R1Q4A3636ABG60 |
36-Mbit QDR⑩II SRAM 2-word Burst
36-Mbit QDR垄芒II SRAM 2-word Burst
|
Renesas Electronics Corporation
|
