| PART |
Description |
Maker |
| EV200ADANA |
POWER/SIGNAL RELAY, SPST, MOMENTARY, 95VDC (COIL), 500A (CONTACT), PANEL MOUNT
|
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
| 1D500A-030 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 500A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 500A一c
|
STEGO, Inc.
|
| NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
| APT5024AVR |
POWER MOS V 500V 18.5A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT4015AVR |
POWER MOS V 400V 25.5A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT40M35PVR |
POWER MOS V 400V 89A 0.035 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT5022AVR |
POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10M07JVR APT10M07 |
POWER MOS V 100V 225A 0.007 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12040JVR |
POWER MOS V 1200V 26A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| APT6013JVR |
POWER MOS V 600V 40A 0.130 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
