| PART |
Description |
Maker |
| M27V401 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM(4Mb低压UV EPROM和OTP EPROM)
|
意法半导
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V402 |
NND - 4 MBIT (256KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27C322 6184 |
32 Mbit (2Mb x16) UV EPROM and OTP EPROM
From old datasheet system
|
STMicro
|
| M27W801 |
8 MBIT (1MB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27W401-80B6 |
4 MBIT (512KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27W80106 M27W801-200N6TR M27W801 M27W801-100B6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27C322 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
