| PART |
Description |
Maker |
| MCR22-6-D MCR22-2RL1 |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate SCR
|
ON Semiconductor
|
| MCR703A-D |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristos
|
ON Semiconductor
|
| 20KDA20 |
Diffusion-type Sillicon Rectifier Diode
|
Nihon Inter Electronics...
NIEC[Nihon Inter Electronics Corporation]
|
| 1SS350 |
Sillicon Epitaxial Schottky Barrier Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| SA08A4C |
Sillicon Controlled Rectifiers Thyristors 0.8A Mold SCR
|
Korea Electronics (KEC)
|
| DCC010 DCC010-TB-E |
Sillicon Epitaxial Planar Type (Series Connection)
Ultrahigh-Speed Switching Diode
|
Sanyo Semicon Device
|
| MCR16N ON1806 MCR16-D |
Sillicon Controlled Rectifiers Reverse Blocking Thyristors
From old datasheet system
SCRs 16 AMPERES RMS 800 VOLT
|
ON Semiconductor
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| S05K75 S20S275B S05K115 S05K130 S05K140 S05K175 S0 |
ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
|
List of Unclassifed Man...
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 0528932095 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|
