PART |
Description |
Maker |
CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM 128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM) From old datasheet system
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Cypress Semiconductor Corp.
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CY7C1350B-166AC CY7C1350B-133AC CY7C1350B-100AC CY |
128Kx36 Pipelined SRAM with NoBL Architecture
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CYPRESS[Cypress Semiconductor]
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KM718FV4021H-5 KM718FV4021H-6 KM718FV4021H-7 KM736 |
(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
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Samsung Electronic
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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz 512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 512K x 36 pipelined SRAM, 225MHz
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Cypress Semiconductor, Corp.
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K7N403601A K7N401801A |
256Kx18-Bit Pipelined NtRAMData Sheet 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128K × 36
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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K7N403609B K7N403609B-QC20 K7N401801B-QC13 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM 128K × 36 128Kx36 & 256Kx18 Pipelined NtRAMTM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K7N403601M K7N401801M |
128Kx36 & 256Kx18 Pipelined NtRAM-TM
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SAMSUNG[Samsung semiconductor]
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K7N403601M |
(K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
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Samsung semiconductor
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GVT71256D36B-5 GVT71256D36T-5 GVT71256D36T-4.4 GVT |
256K x 36 pipelined SRAM, 200MHz 256K x 36 pipelined SRAM, 225MHz 256K x 36 pipelined SRAM, 150MHz 256K x 36 pipelined SRAM, 166MHz 512K x 18 pipelined SRAM, 225MHz 512K x 18 pipelined SRAM, 150MHz 512K x 18 pipelined SRAM, 166MHz 512K x 18 pipelined SRAM, 200MHz
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Cypress
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