PART |
Description |
Maker |
APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
APT5017 APT5017SVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT5017BVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT12060LVR APT12060B2VR |
POWER MOS V 1200V 20A 0.600 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
M68732L 68732L |
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO 硅场效应晶体管功率放大器00 - 430MHz瓦,调频便携式收音机 From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FGA30N120FTD FGA30N120FTDTU |
1200V, 30A Trench IGBT
|
Fairchild Semiconductor
|
RJK0852DPB RJK0852DPB-00-J5 RJK0852DPB-13 |
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RHRP30120 FN3409 |
From old datasheet system 30A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
NGTB30N120IHL |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
NGTB30N120IHSW |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
APT8043SLL APT8043BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 THYRISTOR PROTECT BIDIR 30A SMB 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 800V 20A 0.430 Ohm
|
Advanced Power Technolo... Advanced Power Technology, Ltd.
|
APT12057JLL |
POWER MOS 7 1200V 19A 0.570 Ohm
|
Advanced Power Technology
|