PART |
Description |
Maker |
APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT5017BVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
RURG30120CC FN3400 |
30A/ 1200V Ultrafast Dual Diode 30A, 1200V Ultrafast Dual Diode From old datasheet system
|
INTERSIL[Intersil Corporation]
|
APT10026JLL |
POWER MOS 7 1000V 30A 0.260 Ohm Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
RHRG30120 |
30A/ 1200V Hyperfast Diode 30A, 1200V Hyperfast Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
RJK03M6DPA RJK03M6DPA-00-J5A |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0654DPB-00-J5 RJK0654DPB-15 |
60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching 60V, 30A, 8.3m?nax. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
APT12057JLL |
POWER MOS 7 1200V 19A 0.570 Ohm
|
Advanced Power Technology
|
RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
HFA30PB120 |
1200V 30A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
International Rectifier
|
APT10026JFLL |
POWER MOS 7 1000V 30A 0.140 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|